Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin
![Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction | Microscopy and Microanalysis | Cambridge Core Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction | Microscopy and Microanalysis | Cambridge Core](https://static.cambridge.org/content/id/urn%3Acambridge.org%3Aid%3Aarticle%3AS143192761500700X/resource/name/firstPage-S143192761500700Xa.jpg)
Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction | Microscopy and Microanalysis | Cambridge Core
![PDF) Conception and optimization of new architecture for high performance organic field effect transistors PDF) Conception and optimization of new architecture for high performance organic field effect transistors](https://i1.rgstatic.net/publication/308543542_Conception_and_optimization_of_new_architecture_for_high_performance_organic_field_effect_transistors/links/59f3003f458515bfd081ff34/largepreview.png)